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UPD61P24CS датащи(PDF) 28 Page - Renesas Technology Corp

номер детали UPD61P24CS
подробное описание детали  MOS INTEGRATED CIRCUIT
PDF  38 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

UPD61P24CS датащи(HTML) 28 Page - Renesas Technology Corp

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µPD61P24
26
DC Programming Characteristics (TA = 25
±5 °C, VDD = 6.0±0.25 V, VPP = 12.5±0.5 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
High-level input voltage
VIH1
Other than CLK
0.7 VDD
VDD
V
VIH2
CLK
VDD–0.5
VDD
V
Low-level input voltage
VIL1
Other than CLK
0
0.3 VDD
V
VIL2
CLK
0
0.4
V
Input leakage current
ILI
VIN = VIL or VIH
10
µA
High-level output voltage
VOH
IOH = –1 mA
VDD–1.0
V
Low-level output voltage
VOL
IOL = 1.6 mA
0.4
V
VDD supply current
IDD
30
mA
VPP supply current
IPP
MD0 = VIL, MD1 = VIH
30
mA
Cautions 1. Keep VPP to within +13.5 V including the overshoot.
2. Apply VDD before VPP, and turn it off after VPP.
AC Programming Characteristics (TA = 25
±5 °C, VDD = 6.0±0.25 V, VPP = 12.5±0.5 V)
Parameter
Symbol
Note 1
Conditions
MIN.
TYP.
MAX.
Unit
Address setup timeNote 2 (vs. MD0
↓)tAS
tAS
2
µs
MD1 setup time (vs. MD0
↓)tM1S
tOES
2
µs
Data setup time (vs. MD0
↓)tDS
tDS
2
µs
Address hold timeNote 2 (vs. MD0
↑)tAH
tAH
2
µs
Data hold time (vs. MD0
↑)tDH
tDH
2
µs
MD0
↑→ data output float delay time
tDF
tDF
0
130
ns
VPP setup time (vs. MD3
↑)tVPS
tVPS
2
µs
VDD setup time (vs. MD3
↑)tVDS
tVCS
2
µs
Initial program pulse width
tPW
tPW
0.95
1.0
1.05
ms
Additional program pulse width
tOPW
tOPW
0.95
21.0
ms
MD0 setup time (vs. MD1
↑)tM0S
tCES
2
µs
MD0
↓→ data output delay time
tDV
tDV
MD0 = MD1 = VIL
1
µs
MD1 hold time (vs. MD0
↑)tM1H
tOEH
tM1H + tM1R
≥ 50
µs2
µs
MD1 recovery time (vs. MD0
↓)tM1R
tOR
2
µs
Program counter reset time
tPCR
—10
µs
CLK input high-, low-level widths
tXH, tXL
0.125
µs
CLK input frequency
fX
4.19
MHz
Initial mode set time
tI
—2
µs
MD3 setup time (vs. MD1
↑)tM3S
—2
µs
MD3 hold time (vs. MD1
↓)tM3H
—2
µs
MD3 setup time (vs. MD0
↓)tM3SR
On reading program memory
2
µs
AddressNote 2
→ data output delay time
tDAD
tACC
On reading program memory
2
µs
AddressNote 2
→ data output hold time
tHAD
tOH
On reading program memory
0
130
ns
MD3 hold time (vs. MD0
↑)tM3HR
On reading program memory
2
µs
MD3
↓→ data output float delay time
tDFR
On reading program memory
2
µs
Reset setup time
tRES
10
µs
Notes 1. Corresponding symbols of
µPD27C256A (the µPD27C256A is a maintenance product).
2. The internal address signal is incremented by one at the falling edge of CLK input at the third clock.



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