Philips Semiconductors

BSP030

N-channel enhancement mode field-effect transistor

Product specification

Rev. 04 — 26 July 2000

2 of 13

9397 750 07268

© Philips Electronics N.V. 2000. All rights reserved.

5.

Quick reference data

6.

Limiting values

Table 2:

Quick reference data

Symbol Parameter

Conditions

Typ

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

30

V

ID

drain current (DC)

Tsp =25 °C; VGS = 4.5 V

−

10

A

Ptot

total power dissipation

Tsp =25 °C

−

8.3

W

Tj

junction temperature

−

150

°C

RDSon

drain-source on-state resistance

VGS = 10 V; ID = 5 A

2030m

Ω

VGS = 4.5 V; ID = 2.5 A

3050m

Ω

Table 3:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage (DC)

Tj =25to150 °C

−

30

V

VDGR

drain-gate voltage (DC)

Tj =25to150 °C; RGS =20kΩ−

30

V

VGS

gate-source voltage (DC)

−±20

V

ID

drain current (DC)

Tsp =25 °C; VGS = 4.5 V;

Figure 2 and 3

−

10

A

Tsp = 100 °C; VGS = 4.5 V; Figure 2

−

6.3

A

IDM

peak drain current

Tsp =25 °C; pulsed; tp ≤ 10 µs;

Figure 3

−

40

A

Ptot

total power dissipation

Tsp =25 °C; Figure 1

−

8.3

W

Tstg

storage temperature

−65

+150

°C

Tj

operating junction temperature

−65

+150

°C

Source-drain diode

IS

source (diode forward) current (DC)

Tsp =25 °C

−

9A

ISM

peak source (diode forward) current

Tsp =25 °C; pulsed; tp ≤ 10 µs

−

40

A