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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRFS4229PBF датащи(PDF) 2 Page - International Rectifier |
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IRFS4229PBF датащи(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRFS4229PbF 2 www.irf.com S D G Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 250 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 210 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 42 48 m Ω VGS(th) Gate Threshold Voltage 3.0 ––– 5.0 V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -14 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 µA ––– ––– 1.0 mA IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 83 ––– ––– S Qg Total Gate Charge ––– 72 110 nC Qgd Gate-to-Drain Charge ––– 26 ––– tst Shoot Through Blocking Time 100 ––– ––– ns EPULSE Energy per Pulse µJ Ciss Input Capacitance ––– 4560 ––– Coss Output Capacitance ––– 390 ––– pF Crss Reverse Transfer Capacitance ––– 100 ––– Coss eff. Effective Output Capacitance ––– 290 ––– LD Internal Drain Inductance ––– 4.5 ––– Between lead, nH LS Internal Source Inductance ––– 7.5 ––– Avalanche Characteristics Parameter Units E AS Single Pulse Avalanche Energy d mJ E AR Repetitive Avalanche Energy mJ V DS(Avalanche) Repetitive Avalanche Voltage à V I AS Avalanche Current Ãd A Diode Characteristics Parameter Min. Typ. Max. Units IS @ TC = 25°C Continuous Source Current ––– ––– (Body Diode) A ISM Pulsed Source Current ––– ––– (Body Diode) à V SD Diode Forward Voltage ––– ––– 1.3 V t rr Reverse Recovery Time ––– 190 290 ns Q rr Reverse Recovery Charge ––– 840 1260 nC 45 180 ––– 790 ––– ––– 1390 ––– 33 26 ––– ––– 300 ––– Typ. Max. ƒ = 1.0MHz, ––– 130 and center of die contact T J = 25°C, IF = 26A, VDD = 50V di/dt = 100A/µs e T J = 25°C, IS = 26A, VGS = 0V e showing the integral reverse p-n junction diode. Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 26A e VDS = VGS, ID = 250µA VDS = 250V, VGS = 0V VGS = 0V, VDS = 0V to 200V VDS = 250V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 0V L = 220nH, C= 0.3µF, VGS = 15V MOSFET symbol VDS = 25V, ID = 26A VDD = 125V, ID = 26A, VGS = 10V e Conditions VDD = 200V, VGS = 15V, RG= 4.7Ω VDS = 200V, RG= 4.7Ω, TJ = 25°C L = 220nH, C= 0.3µF, VGS = 15V VDS = 200V, RG= 4.7Ω, TJ = 100°C VDS = 25V |
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