Data Sheet

G15166EJ4V0DS

3

µPC4064

ELECTRICAL CHARACTERISTICS (TA = 25°C, V

± = ±15 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input Offset Voltage

VIO

RS

≤ 50 Ω

±2

±10

mV

Input Offset Current

Note 7

IIO

±5

±50

pA

Input Bias Current

Note 7

IB

10

100

pA

Large Signal Voltage Gain

AV

RL

≥ 10 kΩ , VO = ±10 V

3000

9000

Supply Current

Note 8

ICC

IO = 0 A

800

1000

µA

Common Mode Rejection Ratio

CMR

70

90

dB

Supply Voltage Rejection Ratio

SVR

70

90

dB

Output Voltage Swing

Vom

RL

≥ 10 kΩ

±12

+14.0

–13.6

V

Common Model Input Voltage Range

VICM

±12

+15

–13

V

Slew Rate

SR

AV = 1

3

V/

µs

Unity Gain Frequency

funity

1

MHz

Input Equivalent Noise Voltage Density

en

RS = 100

Ω, f = 1 kHz

30

nV/

√Hz

Channel Separation

120

dB

Input Offset Voltage

VIO

RS

≤ 50 Ω, TA = –20 to +70°C

±15

mV

Average VIO Temperature Drift

∆VIO/∆T

TA = –20 to +70°C

±10

µV/°C

Input Offset Current

Note 7

IIO

TA = –20 to +70°C

±2

nA

Input Bias Current

Note 7

IB

TA = –20 to +70°C

3.5

nA

Notes 7. Input bias currents flow into IC. Because each currents are gate leak current of P-channel J-FET on input

stage. And that are temperature sensitive. Short time measuring method is recommendable to maintain the

junction temperature close to the operating ambient temperature.

8. This current flows irrespective of the existence of use.