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APM7312 датащи(PDF) 2 Page - Anpec Electronics Coropration

номер детали APM7312
подробное описание детали  Dual N-Channel Enhancement Mode MOSFET
PDF  9 Pages
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производитель  ANPEC [Anpec Electronics Coropration]
домашняя страница  http://www.anpec.com.tw
Logo ANPEC - Anpec Electronics Coropration

APM7312 датащи(HTML) 2 Page - Anpec Electronics Coropration

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Copyright
 ANPEC Electronics Corp.
Rev. A.5 - Feb., 2003
www.anpec.com.tw
2
APM7312
Symbol
Parameter
Rating
Unit
T
A=25°C
2.5
P
D
Maximum Power Dissipation
T
A=100°C
1.0
W
T
J
Maximum Junction Temperature
150
°C
T
STG
Storage Temperature Range
-55 to 150
°C
RθjA
Thermal Resistance – Junction to Ambient
50
°C/W
* Surface Mounted on FR4 Board, t
≤ 10 sec.
APM7312
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
Static
BV
DSS
Drain-Source Breakdown
Voltage
V
GS=0V , IDS=250µA
20
V
I
DSS
Zero Gate Voltage Drain
Current
V
DS=18V , VGS=0V
1
µA
V
GS(th)
Gate Threshold Voltage
V
DS=VGS , IDS=250µA
0.7
0.9
1.5
V
I
GSS
Gate Leakage Current
V
GS=±16V , VDS=0V
±100
nA
V
GS=10V , IDS=6A
35
40
V
GS=4.5V , IDS=4A
45
54
R
DS(ON)
a
Drain-Source On-state
Resistance
V
GS=2.5V , IDS=2A
110
120
m
Ω
V
SD
a
Diode Forward Voltage
I
SD=1.7A , VGS=0V
0.7
1.3
V
Dynamic
b
Q
g
Total Gate Charge
12
16
Q
gs
Gate-Source Charge
3
Q
gd
Gate-Drain Charge
V
DS=10V , IDS= 6A
V
GS=4.5V ,
4.5
nC
t
d(ON)
Turn-on Delay Time
612
T
r
Turn-on Rise Time
510
t
d(OFF)
Turn-off Delay Time
16
40
T
f
Turn-off Fall Time
V
DD=10V , IDS=1A ,
V
GEN=4.5V , RG=0.2Ω
520
ns
C
iss
Input Capacitance
450
C
oss
Output Capacitance
100
C
rss
Reverse Transfer Capacitance
V
GS=0V
V
DS=15V
Frequency=1.0MHz
60
pF
Electrical Characteristics (T
A = 25°C unless otherwise noted)
Absolute Maximum Ratings (Cont.) (T
A = 25°C unless otherwise noted)
Notes
a : Pulse test ; pulse width
≤300µs, duty cycle ≤ 2%
b : Guaranteed by design, not subject to production testing



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