UTT75N75M

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 9

www.unisonic.com.tw

QW-R209-154.D



ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0 V, ID=250µA

75

V

Drain-Source Leakage Current

IDSS

VDS=75 V, VGS=0V

1

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=20V, VDS=0V

100

nA

Reverse

VGS=-20V, VDS=0V

-100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

1.0

3.0

V

Static Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=37.5A

9.0

mΩ

VGS=4.5V, ID=37.5A

12

mΩ

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VGS=0V, VDS=25V, f=1MHz

4300

pF

Output Capacitance

COSS

310

pF

Reverse Transfer Capacitance

CRSS

265

pF

SWITCHING CHARACTERISTICS

Total Gate Charge (Note 1)

QG

VDS=60V, VGS=10V, ID=75A,

(Note 1, 2)

134

nC

Gate-Source Charge

QGS

20

nC

Gate-Drain Charge

QGD

43

nC

Turn-On Delay Time (Note 1)

tD(ON)

VDD=30V, VGS=10V, ID=75A,

RG =3.3Ω (Note 1, 2)

15

ns

Turn-On Rise Time

tR

20

ns

Turn-Off Delay Time

tD(OFF)

70

ns

Turn-Off Fall Time

tF

26

ns

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Continuous Source Current

IS

75

A

Pulsed Source Current

ISM

150

A

Drain-Source Diode Forward Voltage (Note 1)

VSD

IS=75A, VGS=0V

1.5

V

Body Diode Reverse Recovery Time (Note 1)

trr

IS=30A, VGS=0V,

dIF/dt=100A/µs

42

nS

Body Diode Reverse Recovery Charge

Qrr

43

nC

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%.

2. Essentially independent of operating temperature.