2SC5696

No.6663-1/4

Features

•

High speed.

•

High breakdown voltage(VCBO=1600V).

•

High reliability(Adoption of HVP process).

•

Adoption of MBIT process.

•

On-chip damper diode.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1600

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

5V

Collector Current

IC

12

A

Collector Current (Pulse)

ICP

36

A

Collector Dissipation

PC

3.0

W

Tc=25

°C85

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=800V, IE=0

10

µA

Collector Cutoff Current

ICES

VCE=1600V, RBE=0

1.0

mA

Collector Sustain Voltage

VCEO(sus)

IC=100mA, IB=0

800

V

Emitter Cutoff Current

IEBO

VEB=4V, IC=0

80

800

mA

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=7.2A, IB=1.8A

3

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=7.2A, IB=1.8A

1.5

V

Continued on next page.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6663A

2SC5696

Color TV Horizontal Deflection

Output Applications

Package Dimensions

unit : mm

2174

[2SC5696]

11901 TS IM TA-3207 / 82200 TS IM TA-2994

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

NPN Triple Diffused Planar Silicon Transistor

16.0

3.4

12

3

2.0

2.8

2.1

5.45

5.45

0.7

0.9

5.6

3.1

1 : Base

2 : Collector

3 : Emitter

SANYO : TO-3PMLH