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C30659-900-R5B датащи(PDF) 4 Page - PerkinElmer Optoelectronics

номер детали C30659-900-R5B
подробное описание детали  Silicon and InGaAs APD Preamplifier Modules
PDF  9 Pages
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производитель  PERKINELMER [PerkinElmer Optoelectronics]
домашняя страница  http://www.perkinelmer.com
Logo PERKINELMER - PerkinElmer Optoelectronics

C30659-900-R5B датащи(HTML) 4 Page - PerkinElmer Optoelectronics

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Page 4
C30659-1550nm Series
C30659-1550nm Series
Test Conditions: Ambient Temperature, Vamp = ±5 Volts, HV = +VR (see Note 1), RL = 50
Ω AC Coupled
1550nm InGaAs APD
Detector Type
C30659-1550-R2A
C30659-1550-R08B
(InGaAs APD C30662E)
(InGaAs APD C30645E)
Min
Typ
Max
Min
Typ
Max
Active Diameter
0.2
0.08
mm
Active Area
0.03
0.005
mm2
Bandwidth Range
50
200
MHz
Temperature Coefficient of VR
for constant Gain
-
0.2
-
-
0.2
-
V/°C
VR for specified responsivity
40
Note 1
70
40
Note 1
70
V
Temperature sensor sensitivity
-1.8
-2.1
-2.4
-1.8
-2.1
-2.4
mV/°C
Responsivity
At 1300nm
-
300
-
-
80
-
kV/W
At 1550nm
-
340
-
-
90
-
kV/W
RF (Internal Feedback Resistor)
-
68
-
-
18
-
k
Noise Equivalent Power (NEP) (note 3)
f - 100 kHz,
∆f = 1.0 Hz
At 1300nm
-
150
180
-
250
375
fW/
√Hz
At 1550nm
-
130
160
-
220
330
fW/
√Hz
Output Spectral Voltage:
(f = 100 kHz - f-3dB)
-
45
55
-
20
30
nV/
√Hz
Output Impedance
33
40
50
33
40
50
System Bandwidth, f-3dB
40
50
-
175
200
-
MHz
Rise Time, tr (
λ = 900 and 1060nm)
10% to 90% points
-
7
-
-
2
-
ns
Fall Time, tf (
λ = 830 and 900nm)
90% to 10% points
-
7
-
-
2
-
ns
Recovery time after overload (note 4)
-
-
150
-
-
150
ns
Output Voltage Swing (1k
Ω load) (note 5)
2
3
-
2
3
-
V
Output Voltage Swing (50
Ω load) (note 5)
0.7
0.9
-
0.7
0.9
-
V
Output Offset Voltage
-1
-0.3
1
-1
-0.3
1
V
Positive Supply Current (V+)
-
20
35
-
20
35
mA
Negative Supply Current (V-)
-
10
20
-
10
20
mA
Notes: 1. A specific value of VR is supplied with each device. The VR value will be within the specified ranges.
2. If = 0.1 mA, 25°C
3. NEPmax is the Maximum Output Spectral Noise Voltage divided by the typical Responsivity.
4. 0dBm, 250ns pulse.
5. Pulsed operation.
Table 3. Electrical Characteristics at TA=22ºC
117142_C30659.qxd
6/21/04
2:33 PM
Page 4



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