FMMT720 datasheet(2/5 Pages) DGNJDZ

номер детали	FMMT720

подробное описание детали	SOT-23 Plastic-Encapsulate Transistors

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производитель	DGNJDZ [Nanjing International Group Co]

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ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100

μA, IE=0

-40

Collector-emitter breakdown voltage

V(BR)CEO*

IC= -10mA, IB=0

-40

Emitter-base breakdown voltage

V(BR)EBO

IE= -100

μA, IC=0

-5

Collector cut-off current

ICBO

VCB=-35V, IE=0

-0.1

μA

Collector cut-off current

ICES

VCE=-35V,VBE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -4V, IC=0

-0.1

μA

hFE(1) *

VCE= -2V,

IC=-10mA

300

hFE(2) *

VCE=-2V,

IC=-100mA

300

hFE(3) *

VCE=-2V,

IC=-1A

180

hFE(4) *

VCE=-2V,

IC=-1.5A

DC current gain

hFE(5) *

VCE=-2V,

IC=-3A

VCE(sat) (1) *IC=-0.1A, IB=-10mA

-40

VCE(sat) (2) *IC=-1A, IB=-50mA

-220

Collector-emitter saturation voltage

VCE(sat) (3) *

IC=-1.5A, IB=-100mA

-330

Base-emitter saturation voltage

VBE(sat) *

IC=-1.5A, IB= -75mA

-1

Base-emitter voltage

VBE(on) *

VCE=-2V, IC=-1.5A

-1

Transition frequency

VCE=-10V,IC=-50mA, f=100MHZ

150

MHz

Collector output capacitance

Cob

VCB=-10V,f=1MHZ

Turn-on Time

t(on)

Turn-off Time

t(off)

VCC=-15V, IC=-0.75A, IB1=

IB2=-15mA

435

*Measured under pulse conditions . Pulse width =300

μs. Duty cycle≤2%.

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