BT258B datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Thyristors

BT258B series

logic level

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-mb

Thermal resistance

2.0

K/W

junction to heatsink

th j-a

Thermal resistance

minimum footprint, FR4 board

K/W

junction to ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Gate trigger current

D = 12 V; IT = 0.1 A

200

µA

Latching current

D = 12 V; IGT = 0.1 A

0.4

Holding current

D = 12 V; IGT = 0.1 A

0.3

On-state voltage

T = 16 A

1.3

1.5

Gate trigger voltage

D = 12 V; IT = 0.1 A

0.4

1.5

D = VDRM(max); IT = 0.1 A; Tj = 110 ˚C

0.1

0.2

D, IR

Off-state leakage current

D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C

0.1

0.5

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

D/dt

Critical rate of rise of

DM = 67% VDRM(max); Tj = 125 ˚C;

100

µs

off-state voltage

exponential waveform; R

GK = 100 Ω

Gate controlled turn-on

TM = 10 A; VD = VDRM(max); IG = 5 mA;

µs

time

G/dt = 0.2 A/µs

Circuit commutated

D = 67% VDRM(max); Tj = 125 ˚C;

100

µs

turn-off time

TM = 12 A; VR = 24 V; dITM/dt = 10 A/µs;

D/dt = 2 V/µs; RGK = 1 kΩ

September 1997

Rev 1.100

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