Philips Semiconductors

Product specification

Thyristors

BT151F series

Fig.7. Normalised gate trigger current

I

Fig.8. Normalised latching current I

versus junction temperature T

Fig.9. Normalised holding current I

versus junction temperature T

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z

pulse width t

Fig.12. Typical, critical rate of rise of off-state voltage,

dV

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

BT151

Tj / C

IGT(Tj)

IGT(25 C)

0

0.5

1

1.5

2

0

5

10

15

20

25

30

BT151

VT / V

IT / A

Tj = 125 C

Tj = 25 C

Vo = 1.06 V

Rs = 0.0304 ohms

typ

max

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

BT145

Tj / C

IL(Tj)

IL(25 C)

0.001

0.01

0.1

1

10

BT151

tp / s

Zth j-hs (K/W)

10us

0.1ms

1ms

10ms

0.1s

1s

10s

t

p

P

t

D

without heatsink compound

with heatsink compound

-50

0

50

100

150

0

0.5

1

1.5

2

2.5

3

BT151

Tj / C

IH(Tj)

IH(25 C)

0

50

100

150

10

100

1000

10000

Tj / C

dVD/dt (V/us)

gate open circuit

RGK = 100 Ohms

February 1996

4

Rev 1.100