2001 Oct 22

2

NXP Semiconductors

Product data sheet

PNP general purpose double transistor

PIMT1

FEATURES

• 600 mW total power dissipation

• Low current (max. 100 mA)

• Low voltage (max. 40 V)

• Reduces number of components and required

PCB area

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

PNP transistor pair in an SC-74 (SOT457) plastic package.

MARKING

PINNING

TYPE NUMBER

MARKING CODE

PIMT1

M1

PIN

DESCRIPTION

1, 4

emitter

TR1; TR2

2, 5

base

TR1; TR2

6, 3

collector

TR1; TR2

MAM457

13

2

TR1

TR2

6

4

5

Top view

12

3

65

4

Fig.1

Simplified outline (SC74; SOT457) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1.

Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

Per transistor

VCBO

collector-base voltage

open emitter

−

−50

V

VCEO

collector-emitter voltage

open base

−

−40

V

VEBO

emitter-base voltage

open collector

−

−5

V

IC

collector current (DC)

−

−100

mA

ICM

peak collector current

−

−200

mA

IBM

peak base current

−

−200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

300

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

−

150

°C

Tamb

operating ambient temperature

−65

+150

°C

Per device

Ptot

total power dissipation

Tamb ≤ 25 °C; note 1

−

600

mW