PEMD13_PUMD13

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© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 3 — 7 December 2011

6 of 16

NXP Semiconductors

PEMD13; PUMD13

NPN/PNP resistor-equipped transistors; R1 = 4.7 k

, R2 = 47 k

7.

Characteristics

[1]

Characteristics of built-in transistor

Table 8.

Characteristics

Tamb =25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor (TR2) with negative polarity

ICBO

collector-base cut-off

current

VCB =50V; IE = 0 A

-

-

100

nA

ICEO

collector-emitter cut-off

current

VCE =30V; IB =0A

-

-

1

A

VCE =30V; IB =0A;

Tj = 150 C

--

5

A

IEBO

emitter-base cut-off

current

VEB =5V; IC =0A

-

-

170

A

hFE

DC current gain

VCE =5V; IC = 10 mA

100

-

-

VCEsat

collector-emitter

saturation voltage

IC =5mA; IB =0.25mA

-

-

100

mV

VI(off)

off-state input voltage

VCE =5V; IC = 100 A-

0.6

0.5

V

VI(on)

on-state input voltage

VCE =0.3 V; IC =5 mA

1.3

0.9

-

V

R1

bias resistor 1 (input)

3.3

4.7

6.1

k



R2/R1

bias resistor ratio

8

10

12

Cc

collector capacitance

VCB =10V; IE =ie =0A;

f=1MHz

TR1 (NPN)

-

-

2.5

pF

TR2 (PNP)

-

-

3

pF

fT

transition frequency

VCE =5V; IC =10 mA;

f=100MHz

[1]

TR1 (NPN)

-

230

-

MHz

TR2 (PNP)

-

180

-

MHz