Nexperia

PEMD13

50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ

VCB (V)

0

50

40

20

30

10

006aac823

1

2

3

Cc

(pF)

0

f = 1 MHz

Tamb = 25 °C

Fig. 7. TR1 (NPN): Collector capacitance as a function

of collector-base voltage; typical values

006aac757

IC (mA)

10-1

102

10

1

102

103

fT

(MHz)

10

f = 100 MHz

Tamb = 25 °C

VCE = 5 V

Fig. 8. TR1 (NPN): Transition frequency as a function

of collector current; typical values of built-in

transistor

IC (mA)

-10-1

-102

-10

-1

006aac824

102

10

103

hFE

1

(1)

(2)

(3)

VCE = -5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 9. TR2 (PNP): DC current gain as a function of

collector current; typical values

006aac825

IC (mA)

-10-1

-102

-10

-1

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = -40 °C

Fig. 10. TR2 (PNP): Collector-emitter saturation voltage

as a function of collector current; typical values

PEMD13

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Product data sheet

28 December 2022

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