4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 0

5, 2023-06-28

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

PXAC210552FC

Package H-37248-4

Thermally-Enhanced High Power RF LDMOS FET

55 W, 28 V, 1805 – 2170 MHz

Description

The PXAC210552FC is a 55-watt LDMOS FET with an asymmetric

design for use in multi-standard cellular power amplifier applications

in the 1805 to 2170 MHz frequency band. It features dual-path design,

input and output matching, and a thermally-enhanced package with

earless flange. Manufactured with Wolfspeed's advanced LDMOS

process, this device provides excellent thermal performance and

superior reliability.

Features

• Broadband internal matching

• Asymmetric Doherty design

- Main: P1dB = 20 W Typ

- Peak: P1dB = 35 W Typ

• CW performance, 2170 MHz, 26 V

- Output power at P1dB = 27 W

- Gain = 17 dB

- Efficiency = 59%

• Integrated ESD protection

• ESD: Human Body Model, Class 1B (per ANSI/

ESDA/JEDEC JS-001)

• Capable of handling 10:1 VSWR @28 V, 55 W

(CW) output power

• Low thermal resistance

• Pb-free and RoHS compliant

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty test fixture)

VDD = 26 V, VGS(peak) = 1.5 V, IDQ = 120 mA, POUT = 39 dBm average, ƒ = 2170 MHz. 3GPP WCDMA signal: 3.84 MHz

bandwidth, 10 dB PAR @0.01% CCDF.

Characteristic

Symbol

Min

Typ

Max

Unit

Linear Gain

Gps

16

17.2

—

dB

Drain Efficiency

hD

46

49

—

%

Adjacent Channel Power Ratio

ACPR

—

–29

–25

dBc

-80

-60

-40

-20

0

20

40

60

80

0

4

8

12

16

20

24

28

32

29

33

37

41

45

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 26 V, IDQ = 120 mA, ƒ = 2170 MHz

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

c210552fc-gr1c

PXAC210552FC