4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

Rev. 05, 2018-08-20

Thermally-Enhanced High Power RF LDMOS FET

700 W, 50 V, 470 – 806 MHz

Description

The PTVA047002EV LDMOS FET is designed for use in power amplifier

applications in the 470 MHz to 806 MHz frequency band. Features

include high gain and thermally-enhanced package with bolt-down flange.

Manufactured with Wolfspeed's advanced LDMOS process, this device

provides excellent thermal performance and superior reliability.

PTVA047002EV

Package H-36275-4

Features

• Input matched

• Integrated ESD protection

• Low thermal resistance

• High gain

• Thermally enhanced package

• RoHS compliant

• Capable of withstanding a 10:1 VSWR at

130 W average power under DVB-T signal

condition

• Human Body Model Class 2 (per ANSI/ESDA/

JEDEC JS-001)

RF Characteristics

DVB-T (8K OFDM, 64QAM) Characteristics (tested in Wolfspeed test fixture, narrowband 806 MHz)

VDD = 50 V, IDQ = 1200 mA, ƒ = 806 MHz, input PAR = 10.5 dB (unclipped), output PAR = 7.8 dB @ 0.01% CCDF probability

Characteristic

Symbol

Min

Typ

Max

Unit

Average Output Power

POUT

—

130

—

W

Gain

Gps

16.5

17.5

—

dB

Drain Efficiency

hD

24

29

—

%

Adjacent Channel Power Ratio

ACPR

—

–29.5

–25

dBc

(ACPR integrated over 200 KHz BW at + 4.3 MHz offset from center frequency)

14

18

22

26

30

34

450 500 550 600 650 700 750 800 850

Frequency (MHz)

DVB-T Performance

Drain Efficiency, Gain vs Frequency

VDD= 50 V, IDQ = 1.2 A, POUT = 135 W avg

Drain Efficiency

Gain

ptva047002ev_g5

PTVA047002EV