Rev. 04, 2023-06-26

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

All published data at TCASE = 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Features

• GaN on SiC HEMT technology

• Typical pulsed CW performance: 10 µs pulse width,

10% duty cycle, 2690 MHz, 48 V, Doherty configuration

- Efficiency = 64%

- Output power at P3dB = 50 W

• Human Body Model Class 1A (per ANSI/ESDA/JEDEC

JS-001)

• Low thermal resistance

• Pb-free and RoHS compliant

Description

The GTRA260502M is a 50-watt (P3dB) GaN on SiC high electron mobility

transistor (HEMT) for use in multi-standard cellular power amplifier

applications. It features input matching, high efficiency, and a thermally-

enhanced DFN SMD package.

GTRA260502M

Package PG-DFN-6.5x7-1

GTRA260502M

Thermally-Enhanced High Power RF GaN on SiC HEMT

50 W, 48 V, 2515 – 2675 MHz

Typical RF Characteristics

Single–carrier WCDMA Specifications (tested in Wolfspeed application circuit for 2515 –2675 MHz)

VDD = 48 V, IDQ = 25 mA, VGS(peak) = – 5 V, channel bandwidth = 3.84 MHz, input PAR = 10 dB @ 0.01% CCDF

POUT

(dBM)

Gain

(dB)

Efficiency

(%)

ACPR +

(dBc)

ACPR –

(dBc)

OPAR

(dB)

2500 MHz

39.0

15.8

59.5

–28.5

–28.5

8.6

2550 MHz

39.0

16.2

59.7

–28.2

–28.2

8.4

2600 MHz

39.0

16.5

59.2

–27.2

–27.2

8.2

2650 MHz

39.0

16.6

56.3

–26.5

–26.4

7.9

2700 MHz

39.0

16.4

53.9

–26.3

–26.1

8.1

5

15

25

35

45

55

65

3

6

9

12

15

18

21

18

23

28

33

38

43

Average Output Power (dBm)

Single-carrier WCDMA Drive-up

VDD = 48 V, IDQ = 25 mA,

VPK = –5.0 V, ƒ = 2700 MHz

3GPP WCDMA signal

10 dB PAR, 3.84 MHz bandwidth

Gain

Efficiency

PAR @ 0.01% CCDF

gtra260502m-gr1a