BT136B datasheet(2/6 Pages) PHILIPS

2 / 6 page

Philips Semiconductors

Product specification

Triacs

BT136B series

THERMAL RESISTANCES

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

th j-mb

Thermal resistance

full cycle

3.0

K/W

junction to mounting base

half cycle

3.7

K/W

th j-a

Thermal resistance

minimum footprint, FR4 board

K/W

junction to ambient

STATIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT136B-

...

...F

...G

Gate trigger current

D = 12 V; IT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

100

Latching current

D = 12 V; IGT = 0.1 A

T2+ G+

T2+ G-

T2- G-

T2- G+

Holding current

D = 12 V; IGT = 0.1 A

On-state voltage

T = 5 A

1.4

1.70

Gate trigger voltage

D = 12 V; IT = 0.1 A

0.7

1.5

D = 400 V; IT = 0.1 A;

0.25

0.4

j = 125 ˚C

Off-state leakage current

D = VDRM(max);

0.1

0.5

j = 125 ˚C

DYNAMIC CHARACTERISTICS

j = 25 ˚C unless otherwise stated

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

BT136B-

...

...F

...G

D/dt

Critical rate of rise of

DM = 67% VDRM(max);

100

200

250

µs

off-state voltage

j = 125 ˚C; exponential

waveform; gate open

circuit

com/dt

Critical rate of change of

DM = 400 V; Tj = 95 ˚C;

µs

commutating voltage

T(RMS) = 4 A;

com/dt = 1.8 A/ms; gate

open circuit

Gate controlled turn-on

TM = 6 A; VD = VDRM(max);-

µs

time

G = 0.1 A; dIG/dt = 5 A/µs

October 1997

Rev 1.100

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