CGH40180PP

2

Rev. 3.3, 2022-11-17

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The information in this document is subject to change without notice.

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Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

VDSS

120

V

25ºC

Gate-to-Source Voltage

VGS

-10, +2

Storage Temperature

TSTG

-65, +150

ºC

Operating Junction Temperature

TJ

225

Maximum Forward Gate Current

IGMAX

60

mA

25ºC

Maximum Drain Current1

IDMAX

24

A

Soldering Temperature2

TS

245

ºC

Screw Torque

τ

40

in-oz

Thermal Resistance, Junction to Case3

RθJC

0.9

ºC/W

85ºC

Case Operating Temperature3, 4

TC

-40, +85

ºC

Electrical Characteristics (TC= 25˚C)

Characteristics

Symbol Min.

Typ.

Max.

Units Conditions

DC Characteristics1

Gate Threshold Voltage

VGS(th)

-3.8

-3.0

-2.3

VDC

VDS = 10 V, ID = 57.6 mA

Gate Quiescent Voltage

VGS(Q)

—

-2.7

—

VDs = 28 V, ID = 2.0 A

Saturated Drain Current2

IDS

40.3

56.4

—

A

VDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

VBR

84

—

—

VDC

VGS = -8 V, ID = 57.6 mA

RF Characteristics3, 4 (TC = 25˚C, F0 = 1.3 GHz unless otherwise noted)

Power Gain

GP

13

—

—

dB

VDD = 28 V, IDQ = 2.0 A, POUT = PSAT

Small Signal Gain

GSS

—

19

—

VDD = 28 V, IDQ = 2.0 A

Power Output at Saturation5

PSAT

180

220

W

Drain Efficiency6

η

56

65

—

%

VDD = 28 V, IDQ = 2.0 A, POUT = PSAT

Output Mismatch Stress

VSWR

—

—

10 : 1

Y

No damage at all phase angles,

VDD = 28 V, IDQ = 2.0 A, POUT = 180 W CW

Dynamic Characteristics7

Input Capacitance

CGS

—

35.7

—

pF

VDS = 28 V, VGS = -8 V, ƒ = 1 MHz

Output Capacitance

CDS

—

9.6

—

Feedback Capacitance

CGD

—

1.6

—

Notes:

1 Current limit for long term, reliable operation

2 Refer to the Application Note on soldering at wolfspeed.com/rf/document-library

3 CGH40180PP at PDISS = 224 W

4 See also, the Power Dissipation De-rating Curve on Page 6

Notes:

1 Measured on wafer prior to packaging

2 Scaled from PCM data

3 Measured in CGH40180PP-AMP, including all coupler losses

4 IDQ of 2.0 A is by biasing each device at 1.0 A

5 PSAT is defined as: Q1 or Q2 = IG = 2.8 mA

6 Drain Efficiency = POUT/PDC

7 Capacitance values are for each side of the device