CGH40120F

2

Rev 4.1 - March 2020

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

V

DSS

120

Volts

25˚C

Gate-to-Source Voltage

V

GS

-10, +2

Volts

25˚C

Storage Temperature

T

STG

-65, +150

˚C

Operating Junction Temperature

T

J

225

˚C

Maximum Forward Gate Current

I

GMAX

30

mA

25˚C

Maximum Drain Current1

I

DMAX

12

A

25˚C

Soldering Temperature2

T

S

245

˚C

Screw Torque

τ

40

in-oz

Thermal Resistance, Junction to Case3

R

θJC

1.39

˚C/W

85˚C

Case Operating Temperature3,4

T

C

-40, +150

˚C

Notes:

1

Current limit for long term, reliable operation

2

Refer to the Application Note on soldering at www.wolfspeed.com/rf/document-library

3

Measured for the CGH40120F at P

DISS = 115 W

4

See also, the Power Dissipation De-rating Curve on Page 7

Electrical Characteristics (T

C = 25˚C)

Characteristics

Symbol

Min.

Typ.

Max.

Units Conditions

DC Characteristics1

Gate Threshold Voltage

V

GS(th)

-3.8

-3.0

-2.3

V

DC

V

DS = 10 V, ID = 28.8 mA

Gate Quiescent Voltage

V

GS(Q)

–

-2.7

–

V

DC

V

DS = 28 V, ID = 1.0 A

Saturated Drain Current2

I

DS

20.2

28.2

–

A

V

DS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage

V

BR

84

–

–

V

DC

V

GS = -8 V, ID = 28.8 mA

RF Characteristics3 (T

C = 25˚C, F0 = 1.3 GHz unless otherwise noted)

Small Signal Gain

G

SS

17.5

19

–

dB

V

DD = 28 V, IDQ = 1.0 A

Power Output4

P

SAT

100

120

–

W

V

DD = 28 V, IDQ = 1.0 A

Drain Efficiency5

η

55

70

–

%

V

DD = 28 V, IDQ = 1.0 A, POUT= PSAT

Output Mismatch Stress

VSWR

–

–

10 : 1

Y

No damage at all phase

angles, V

DD = 28 V, IDQ = 1.0 A,

P

OUT = 100 W CW

Dynamic Characteristics

Input Capacitance

C

GS

–

35.3

–

pF

V

DS = 28 V, Vgs = -8 V, f = 1 MHz

Output Capacitance

C

DS

–

9.1

–

pF

V

DS = 28 V, Vgs = -8 V, f = 1 MHz

Feedback Capacitance

C

GD

–

1.6

–

pF

V

DS = 28 V, Vgs = -8 V, f = 1 MHz

Notes:

1

Measured on wafer prior to packaging

2

Scaled from PCM data

3

Measured in CGH40120F-AMP

4

P

SAT is defined as IG = 2.8 mA

5

Drain Efficiency = P

OUT / PDC