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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IPW95R310PFD датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IPW95R310PFD датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IPW95R310PFD FEATURES · Drain Current : ID= 17.5A@ TC=25℃ · Drain Source Voltage : VDSS= 950V(Min) · Static Drain-Source On-Resistance : RDS(on) = 0.31Ω(Max) @ VGS= 10V · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION · High peak current capability · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 950 V VGS Gate-Source Voltage(static) ± 20 V ID Drain Current-Continuous 17.5 A IDM Drain Current-Single Pulsed 62 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.00 ℃ /W |
Аналогичный номер детали - IPW95R310PFD |
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Аналогичное описание - IPW95R310PFD |
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