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BST82 датащи(PDF) 4 Page - NXP Semiconductors

номер детали BST82
подробное описание детали  N-channel enhancement mode vertical D-MOS transistor
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BST82 датащи(HTML) 4 Page - NXP Semiconductors

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April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BST82
CHARACTERISTICS
Tj =25 °C unless otherwise specified
Drain-source breakdown voltage
ID =10 µA; VGS =0
V(BR)DSS
min.
80 V
Drain-source leakage current
VDS = 60 V; VGS =0
IDSS
max.
1.0
µA
Gate-source leakage current
VGS = 20 V; VDS =0
IGSS
max.
100 nA
Gate-source cut-off voltage
min.
max.
1.5
3.5
V
V
ID = 1 mA; VDS =VGS
V(P)GS
Drain-source ON-resistance
typ.
max.
7
10
Ω
Ω
ID = 150 mA; VGS =5 V
RDS(on)
Transfer admittance
ID = 175 mA; VDS = 5 V
 Yfs
typ.
150 mS
Input capacitance at f = 1 MHz
VDS = 10 V; VGS =0
Ciss
typ.
max.
15
30
pF
pF
Output capacitance at f = 1 MHz
typ.
max.
13
20
pF
pF
VDS = 10 V; VGS =0
Coss
Feedback capacitance at f = 1 MHz
VDS = 10 V; VGS = 0
Crss
typ.
max.
3
6
pF
pF
Switching times (see Figs 2 and 3)
typ.
max.
4
10
ns
ns
ID = 175 mA; VDD = 50 V; VGS = 0 to 10 V
ton
toff
typ.
max.
4
10
ns
ns



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