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BST60 датащи(PDF) 3 Page - NXP Semiconductors |
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BST60 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 Apr 27 3 Philips Semiconductors Product specification PNP Darlington transistors BST60; BST61; BST62 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BST60 −−60 V BST61 −−80 V BST62 −−90 V VCES collector-emitter voltage VBE =0 BST60 −−45 V BST61 −−60 V BST62 −−80 V VEBO emitter-base voltage open collector −−5V IC collector current (DC) −−0.5 A ICM peak collector current −−1.5 A IB base current (DC) −−100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 1.3 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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