BST50 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1999 Apr 26

Philips Semiconductors

Product speciﬁcation

NPN Darlington transistors

BST50; BST51; BST52

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Pulse test: tp ≤ 300 µs; δ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICES

collector cut-off current

BST50

VBE = 0; VCE =45V

−−

BST51

VBE = 0; VCE =60V

−−

BST52

VBE = 0; VCE =80V

−−

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

hFE

DC current gain

VCE = 10 V; note 1; (see Fig.2)

IC = 150 mA

1000

−−

IC = 500 mA

2000

−−

VCEsat

collector-emitter saturation

voltage

IC = 500 mA; IB = 0.5 mA

−−

1.3

IC = 500 mA; IB = 0.5 mA;

Tj = 150 °C

−−

1.3

VBEsat

base-emitter saturation voltage

IC = 500 mA; IB = 0.5 mA

−−

1.9

transition frequency

IC = 500 mA; VCE =5V;

f = 100 MHz

−

200

−

MHz

Switching times (between 10% and 90% levels); (see Fig.3)

ton

turn-on time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

−

400

−

toff

turn-off time

−

1500

−

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