1999 Apr 26

2

Philips Semiconductors

Product specification

NPN high-voltage transistors

BST39; BST40

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 350 V).

APPLICATIONS

• General purpose switching and amplification.

DESCRIPTION

NPN high-voltage transistor in a SOT89 plastic package.

PNP complements: BST15 and BST16.

MARKING

TYPE NUMBER

MARKING CODE

BST39

AT1

BST40

AT2

PINNING

PIN

DESCRIPTION

1

emitter

2

collector

3

base

Fig.1 Simplified outline (SOT89) and symbol.

handbook, halfpage

123

Bottom view

MAM296

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for SOT89 in the General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BST39

−

400

V

BST40

−

300

V

collector-emitter voltage

open base

BST39

−

350

V

BST40

−

250

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

100

mA

peak collector current

−

200

mA

peak base current

−

100

mA

total power dissipation

−

1.3

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C