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MS2604 датащи(PDF) 1 Page - Advanced Power Technology |
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MS2604 датащи(HTML) 1 Page - Advanced Power Technology |
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1 / 3 page ![]() 12-05-2002 MS2604 RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C) Symbol Parameter Value Unit VCC Collector Supply Voltage 46 V IC Device Current 4 A PDISS Power Dissipation 100 W TJ Junction Temperature 200 °°°°C TSTG Storage Temperature -65 to +200 °°°°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Junction - Case Thermal Resistance 2.0 °°°°C/W Features Features Features Features • 2.7 – 3.1 GHz • 40 VOLTS • POUT = 25 WATTS • GP = 6.2 dB MINIMUM • GOLD METALLIZATION • INPUT/OUTPUT MATCHING • COMMON BASE CONFIGURATION DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS2604 is a silicon NPN bipolar transistor designed for pulsed S-Band radar applications. The MS2604 is capable of operation over a wide range of pulse widths and duty cycles. Internal impedance matching and gold metalization provide consistent broadband performance and long term reliability. |
Аналогичный номер детали - MS2604 |
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Аналогичное описание - MS2604 |
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