1999 Apr 15

2

Philips Semiconductors

Product specification

PNP high-voltage transistor

BSS63

FEATURES

• Low current (max. 100 mA)

• High voltage (max. 100 V).

APPLICATIONS

• High-voltage general purpose

• Switching applications.

DESCRIPTION

PNP high-voltage transistor in a SOT23 plastic package.

NPN complement: BSS64.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

BSS63

BM

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM256

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−−110

V

collector-emitter voltage

open base

−−100

V

emitter-base voltage

open collector

−−6V

collector current (DC)

−−100

mA

peak collector current

−−100

mA

peak base current

−−100

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C