Rev. 0, JULY 2021

4600 Silicon Drive | Durham, NC 27703 | wolfspeed.com

C6D08065G

Package Type: TO-263-2

Marking: C6D08065

Features

• Low Forward Voltage (V

F) Drop with Positive

Temperature Coefficient

• Zero Reverse Recovery Current / Forward

Recovery Voltage

• Temperature-Independent Switching Behavior

• Low Leakage Current (I

R)

Applications

• Industrial Power Supplies

• Switch Mode Power Supplies

• Server / Telecom Power Supplies

• Power Factor Correction

• Solar Inverter

• Uninterruptible Power Supply

6th Generation 650 V, 8 A Silicon Carbide Schottky Diode

Description

With the performance advantages of a Silicon Carbide (SiC)

Schottky Barrier diode, power electronics systems can expect

to meet higher efficiency standards than Si-based solutions,

while also reaching higher frequencies and power densities.

SiC diodes can be easily paralleled to meet various application

demands, without concern of thermal runaway. In combination

with the reduced cooling requirements and improved thermal

performance of SiC products, SiC diodes are able to provide

lower overall system costs in a variety of diverse applications.

Maximum Ratings (T

C = 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Test Conditions

Note

Repetitive Peak Reverse Voltage V

RRM

650

V

DC Blocking Voltage

V

DC

650

Continuous Forward Current

I

F

30

A

T

J = 25 °C

Fig. 3

15

T

J = 125 °C

8

T

J = 155 °C

Repetitive Peak Forward Surge

Current

I

FRM

31

T

c = 25 °C, tp = 10 ms, Half Sine Wave

17

T

c = 110 °C, tp = 10 ms, Half Sine Wave

Non-Repetitive Peak Forward

Surge Current

I

FSM

56

T

c = 25 °C, tp = 10 ms, Half Sine Wave

Fig. 8

48

T

c = 110 °C, tp = 10 ms, Half Sine Wave

I

F, Max

650

T

c = 25 °C, tp = 10 µs, Pulse

590

T

c = 110 °C, tp = 10 µs, Pulse

Power Dissipation

P

tot

92

W

T

J = 25 °C

Fig. 4

40

T

J = 110 °C

PIN 1

PIN 2

CASE

1

2