2

C4D30120D Rev. E, 09-2016

0

5

10

15

20

25

30

0

0.5

1

1.5

2

2.5

3

3.5

4

Electrical Characteristics (Per Leg)

Symbol Parameter

Typ.

Max.

Unit

Test Conditions

Note

V

F

Forward Voltage

1.6

2.3

1.8

3

V

I

F = 15 A TJ=25°C

I

F = 15 A TJ=175°C

Fig. 1

I

R

Reverse Current

35

120

200

300

μA

V

R = 1200 V TJ=25°C

V

R = 1200 V TJ=175°C

Fig. 2

Q

C

Total Capacitive Charge

77.5

nC

V

R = 800 V, IF = 15A

di/dt = 200 A/μs

T

J = 25°C

Fig. 5

C

Total Capacitance

1200

70

50

pF

V

R = 0 V, TJ = 25°C, f = 1 MHz

V

R = 400 V, TJ = 25˚C, f = 1 MHz

V

R = 800 V, TJ = 25˚C, f = 1 MHz

Fig. 6

E

C

Capacitance Stored Energy

22.1

μJ

V

R = 800 V

Fig. 7

Note:This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Symbol

Parameter

Typ.

Unit

Note

R

θ

JC

Thermal Resistance from Junction to Case

0.34**

0.68*

°C/W

Fig. 9

** ** Per Device, * Per Leg

Typical Performance (Per Leg)

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

TJ=-55°C

TJ= 25°C

T

J= 75°C

T

J =125°C

T

J =175°C

V

F (V)

0.8

1

1.2

1.4

1.6

1.8

2

0

0.2

0.4

0.6

200

400

600

800

1000

1200

1400

1600

1800

TJ=-55°C

TJ= 25°C

T

J= 75°C

T

J =125°C

T

J =175°C

V

R (V)