2

C3D08060G Rev. H, 01-2018

Electrical Characteristics

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

V

F

Forward Voltage

1.5

2.1

1.8

2.4

V

I

F = 8 A TJ=25°C

I

F = 8 A TJ=175°C

Fig. 1

I

R

Reverse Current

8.5

17

42.5

170

μA

V

R = 600 V TJ=25°C

V

R = 600 V TJ=175°C

Fig. 2

Q

C

Total Capacitive Charge

20

nC

V

R = 400 V, IF = 8A

di/dt = 500 A/μs

T

J = 25°C

Fig. 5

C

Total Capacitance

395

37

32

pF

V

R = 0 V, TJ = 25°C, f = 1 MHz

V

R = 200 V, TJ = 25˚C, f = 1 MHz

V

R = 400 V, TJ = 25˚C, f = 1 MHz

Fig. 6

E

C

Capacitance Stored Energy

3.0

μJ

V

R = 400 V

Fig. 7

Note:This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Symbol Parameter

Typ.

Unit

Note

R

θ

JC

Thermal Resistance from Junction to Case

1.4

°C/W

Fig. 9

Typical Performance

10

15

20

25

30

TJ = 175 °C

TJ = 125 °C

TJ = 75 °C

T = 25 °C

0

5

10

0 100 200 300 400 500 600 700 800 900 1000

Reverse Voltage, VR (V)

TJ = -55 °C

TJ = 25 °C

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

8

10

12

14

16

18

20

TJ = -55 °C

TJ = 25 °C

TJ = 75 °C

TJ = 175 °C

TJ = 125 °C

0

2

4

6

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Foward Voltage, VF (V)

V

F (V)

V

R (V)