2

C3D03060F Rev. F, 02-2019

Electrical Characteristics

Symbol Parameter

Typ.

Max.

Unit

Test Conditions

Note

V

F

Forward Voltage

1.5

1.8

1.7

2.4

V

I

F = 3 A TJ=25°C

I

F = 3 A TJ=175°C

Fig. 1

I

R

Reverse Current

4

8

20

80

μA

V

R = 600 V TJ=25°C

V

R = 600 V TJ=175°C

Fig. 2

Q

C

Total Capacitive Charge

7.6

nC

V

R = 400 V, IF = 3A

di/dt = 500 A/μS

T

J = 25°C

Fig. 5

C

Total Capacitance

166

14

11

pF

V

R = 0 V, TJ = 25°C, f = 1 MHz

V

R = 200 V, TJ = 25˚C, f = 1 MHz

V

R = 400 V, TJ = 25˚C, f = 1 MHz

Fig. 6

E

C

Capacitance Stored Energy

1.1

μJ

V

R = 400 V

Fig. 7

Note: This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Symbol Parameter

Typ.

Unit

Note

R

θ

JC

Thermal Resistance from Junction to Case

5.5

°C/W

Fig. 9

Typical Performance

40

60

80

100

TJ = 175 °C

TJ = 125 °C

TJ = 75 °C

T = 25 °C

0

20

0

200

400

600

800

1000

1200

Reverse Voltage, VR (V)

TJ = -55 °C

TJ = 25 °C

Figure 1. Forward Characteristics

Figure 2. Reverse Characteristics

4

6

8

10

TJ = -55 °C

TJ = 25 °C

TJ = 75 °C

TJ = 175 °C

TJ = 125 °C

0

2

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

Foward Voltage, VF (V)

V

F (V)

V

R (V)