1999 Apr 15

2

Philips Semiconductors

Product specification

NPN switching transistors

BSR13; BSR14

FEATURES

• High current (max. 800 mA)

• Low voltage (max. 40 V).

APPLICATIONS

• Switching and linear applications.

DESCRIPTION

NPN switching transistor in a SOT23 plastic package.

PNP complements: BSR15 and BSR16.

MARKING

Note

1.

∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

TYPE NUMBER

BSR13

U7

∗

BSR14

U8

∗

PINNING

PIN

DESCRIPTION

1

base

2

emitter

3

collector

Fig.1 Simplified outline (SOT23) and symbol.

handbook, halfpage

2

1

3

MAM255

Top view

2

3

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSR13

−

60

V

BSR14

−

75

V

collector-emitter voltage

open base

BSR13

−

30

V

BSR14

−

40

V

emitter-base voltage

open collector

BSR13

−

5V

BSR14

−

6V

collector current (DC)

−

800

mA

peak collector current

−

800

mA

peak base current

−

200

mA

total power dissipation

−

250

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C