BSP92 datasheet(3/8 Pages) PHILIPS

3 / 8 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP92

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX. UNIT

−V(BR)DSS

drain-source breakdown voltage

−ID = 10 µA; VGS = 0

240

−−

−I

DSS

drain-source leakage current

−VDS = 200 V; VGS = 0

−−

µA

±I

GSS

gate-source leakage current

±VGS = 20 V; VDS = 0

−−

100

−VGS(th)

gate-source threshold voltage

−ID = 1 mA; VGS = VDS

0.8

−

−V

gate-source voltage

−ID = 50 mA; −VDS = 5 V

0.8

−

2.8

RDS(on)

drain-source on-resistance

−ID = 180 mA; −VGS = 10 V

−

Ω

−ID = 100 mA; −VGS = 5 V

−−

Ω

−I

D = 25 mA; −VGS = 2.8 V

−−

Ω

 Y

fs

transfer admittance

−ID = 180 mA; −VDS = 25 V

100

200

−

Ciss

input capacitance

−VDS = 25 V; VGS = 0; f = 1 MHz

−

Coss

output capacitance

−VDS = 25 V; VGS = 0; f = 1 MHz

−

Crss

feedback capacitance

−VDS = 25 V; VGS = 0; f = 1 MHz

−

615

Switching times (see Figs 3 and 4)

ton

turn-on time

−ID = 250 mA; −VDD = 50 V;

−VGS = 0 to 10 V

−

510

toff

turn-off time

−ID = 250 mA; −VDD = 50 V;

−VGS = 0 to 10 V

−

Fig.2 Power derating curve.

handbook,

100

200

1.6

150

1.2

0.8

0.4

MBB693

Ptot

(W)

Tamb (°C)

Fig.3 Switching times test circuit.

handbook, halfpage

MBB689

Ω

VDD = −50 V

0 V

−10 V

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