1999 Apr 23

2

Philips Semiconductors

Product specification

NPN Darlington transistors

BSP50; BSP51; BSP52

FEATURES

• High current (max. 1 A)

• Low voltage (max. 80 V)

• Integrated diode and resistor.

APPLICATIONS

• Industrial high gain amplification.

DESCRIPTION

NPN Darlington transistor in a SOT223 plastic package.

PNP complements: BSP60, BSP61 and BSP62.

PINNING

PIN

DESCRIPTION

1

base

2,4

collector

3

emitter

Fig.1 Simplified outline (SOT223) and symbol.

4

12

3

MAM265

Top view

1

2, 4

3

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

For other mounting conditions, see

“Thermal considerations for the SOT223 in the General Part of associated

Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

BSP50

−

60

V

BSP51

−

80

V

BSP52

−

90

V

collector-emitter voltage

BSP50

−

45

V

BSP51

−

60

V

BSP52

−

80

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

2A

base current (DC)

−

100

mA

total power dissipation

1.25

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C