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PDTC124EU датащи(PDF) 5 Page - NXP Semiconductors

номер детали PDTC124EU
подробное описание детали  NPN resistor-equipped transistors; R1 = 22 k-ohm, R2 = 22 k-ohm
PDF  14 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PDTC124EU датащи(HTML) 5 Page - NXP Semiconductors

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2004 Aug 17
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 22 k
Ω, R2 = 22 kΩ
PDTC124E series
CHARACTERISTICS
Tamb =25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =50V; IE =0
−−
100
nA
ICEO
collector-emitter cut-off current
VCE =30V; IB =0
−−
1
µA
VCE =30V; IB = 0; Tj = 150 °C
−−
50
µA
IEBO
emitter-base cut-off current
VEB =5V; IC =0
−−
180
µA
hFE
DC current gain
VCE =5V; IC = 5 mA
60
−−
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
−−
150
mV
Vi(off)
input-off voltage
IC = 100 µA; VCE =5V
−
1.1
0.8
V
Vi(on)
input-on voltage
IC = 5 mA; VCE = 0.3 V
2.5
1.7
−
V
R1
input resistor
15.4
22
28.6
k
Ω
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB = 10 V; f = 1 MHz
−−
2.5
pF
R2
R1
--------



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