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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.

Product data sheet

Rev. 01 — 15 April 2005

3 of 10

Philips Semiconductors

BAS16H

High-speed switching diode in SOD123F package

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB) with 60

µm copper strip line.

[2]

[3]

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB with 60

µm copper strip line.

[2]

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

repetitive peak reverse

voltage

-

100

V

reverse voltage

-

100

V

forward current

[1] -

215

mA

repetitive peak forward

current

-

500

mA

non-repetitive peak forward

current

[2] -4

A

[2] -2

A

[2] -

1.5

A

total power dissipation

[1] -

0.38

W

[3] -

0.83

W

junction temperature

-

150

°C

ambient temperature

−65

+150

°C

storage temperature

−65

+150

°C

Table 6:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

thermal resistance from

junction to ambient

[1] -

-

330

K/W

[2] -

-

150

K/W

thermal resistance from

junction to solder point

--70

K/W