BSP206 datasheet(3/12 Pages) PHILIPS

3 / 12 page

April 1995

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP206

RATINGS

THERMAL RESISTANCE

Note

1. Device mounted on an epoxy printed-circuit board 40 mm

× 40 mm × 1.5 mm; mounting pad for the drain lead min.

6cm2.

CHARACTERISTICS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Drain-source voltage

−VDS

max.

60 V

Gate-source voltage (open drain)

± V

GSO

max.

20 V

Drain current (DC)

−I

max.

350 mA

Drain current (peak)

−I

max.

700 mA

Total power dissipation up to Tamb =25 °C (note 1)

Ptot

max.

1.5 W

Storage temperature range

Tstg

−65 to + 150 °C

Junction temperature

max.

150

°C

From junction to ambient (note 1)

Rth j-a

83.3 K/W

Tj =25 °C unless otherwise speciﬁed

Drain-source breakdown voltage

−I

D =10 µA; VGS =0

−V(BR)DSS

min.

60 V

Drain-source leakage current

−VDS = 48 V; VGS =0

−IDSS

max.

1.0

µA

Gate-source leakage current

±VGS = 20 V; VDS =0

±IGSS

max.

100 nA

Gate threshold voltage

−ID = 1 mA; VDS =VGS

−VGS(th)

min.

max.

1.5

3.5

Drain-source ON-resistance

−I

D = 200 mA; −VGS =10V

RDS(on)

typ.

max.

4.5

Ω

Transfer admittance

−I

D = 200 mA; −VDS =15V

 Yfs 

min.

typ.

100

200

Input capacitance at f = 1 MHz;

−V

DS = 10 V; VGS =0

Ciss

typ.

max.

Output capacitance at f = 1 MHz;

−V

DS = 10 V; VGS =0

Coss

typ.

max.

Feedback capacitance at f = 1 MHz;

−V

DS = 10 V; VGS =0

Crss

typ.

max.

Switching times (see Figs 2 and 3)

−I

D = 200 mA; −VDD =50V;

typ.

max.

−VGS = 0 to 10 V

ton

toff

typ.

max.

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