BSP19 datasheet(3/8 Pages) PHILIPS

номер детали	BSP19

подробное описание детали	NPN high-voltage transistors

PDF	8 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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3 / 8 page

1999 Jun 01

Philips Semiconductors

Product speciﬁcation

NPN high-voltage transistors

BSP19; BSP20

THERMAL CHARACTERISTICS

Note

1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.

For other mounting conditions, see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

104

K/W

Rth j-s

thermal resistance from junction to soldering point

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCE = 300 V

−

IEBO

emitter cut-off current

IC = 0; VEB =5V

−

100

hFE

DC current gain

VCE =10V; IC =20mA

−

VCEsat

collector-emitter saturation voltage

IC = 50 mA; IB =4mA

−

0.5

collector capacitance

IE =ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

transition frequency

VCE =10V; IC = 10 mA; f = 100 MHz 70

−

MHz

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