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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BSP152 датащи(PDF) 2 Page - NXP Semiconductors |
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BSP152 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 200 V ID DC drain current − 550 mA Ptot total power dissipation up to Tamb = 25 °C − 1.5 W ±VGSO gate-source voltage open drain − 40 V RDS(on) drain-source on-resistance ID = 750 mA; VGS = 10 V − 2.5 Ω VGS(off) gate-source cut-off voltage ID = 1 mA; VDS = VGS 1.5 3.5 V Fig.1 Simplified outline and symbol. handbook, halfpage MAM054 4 12 3 Top view s d g |
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