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BSP121 датащи(PDF) 3 Page - NXP Semiconductors |
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BSP121 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 12 page ![]() 1998 Apr 01 3 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP121 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL RESISTANCE Note 1. Device mounted on an epoxy printed-circuit board 40 mm × 40 mm × 1.5 mm; mounting pad for the drain lead min. 6 cm2. Drain-source voltage VDS max. 200 V Gate-source voltage (open drain) ±V GSO max. 20 V Drain current (DC) ID max. 350 mA Drain current (peak) IDM max. 1.2 A Total power dissipation up to Tamb =25 °C (note 1) Ptot max. 1.5 W Storage temperature range Tstg −65 to + 150 °C Junction temperature Tj max. 150 °C From junction to ambient (note 1) Rthj-a = 83.3 K/W |
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