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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BSP120 датащи(PDF) 2 Page - NXP Semiconductors |
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BSP120 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP120 DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown QUICK REFERENCE DATA PINNING - SOT223 Marking code BSP120 Drain-source voltage VDS max. 200 V Drain-current (DC) ID max. 250 mA Drain-source ON-resistance typ. max. 7 12 Ω Ω ID = 250 mA; VGS = 10 V RDS(on) Gate threshold voltage VGS(th) max. 2.8 V 1 = gate 2 = drain 3 = source 4 = drain PIN CONFIGURATION Fig.1 Simplified outline and symbol. handbook, halfpage MAM054 4 12 3 Top view s d g |
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