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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BSP107 датащи(PDF) 2 Page - NXP Semiconductors |
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BSP107 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP107 FEATURES • Direct interface to C-MOS, TTL, etc. due to low threshold voltage • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope. Intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer driver switching. PINNING - SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VDS drain-source voltage (DC) 200 V VGS(th) gate-source threshold voltage 2.4 V ID drain current (DC) 200 mA RDS(on) drain-source on-state resistance 28 Ω Fig.1 Simplified outline and symbol. handbook, halfpage MAM054 4 12 3 Top view s d g |
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