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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BSP106 датащи(PDF) 2 Page - NXP Semiconductors |
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BSP106 датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page  April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor BSP106 FEATURES • Very low RDS(on) • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN DESCRIPTION 1 gate 2 drain 3 source 4 drain QUICK REFERENCE DATA PIN CONFIGURATION SYMBOL PARAMETER CONDITIONS MAX. UNIT VDS drain-source voltage − 60 V ID drain current DC value 425 mA RDS(on) drain-source on-resistance ID = 200 mA VGS = 10 V 4 Ω VGS(th) gate-source threshold voltage ID = 1 mA VGS =VDS 3V Fig.1 Simplified outline and symbol. handbook, halfpage MAM054 4 12 3 Top view s d g |
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