BSP090 datasheet(8/12 Pages) PHILIPS

8 / 12 page

1997 Mar 13

Philips Semiconductors

Product speciﬁcation

P-channel enhancement mode vertical

D-MOS transistor

BSP090

Fig.10 Source current as a function of source-drain

diode forward voltage; typical values.

VGD =0.

(1) Tamb = 150 °C; tp =80 µs; δ =0.

(2) Tamb=25 °C; tp =80 µs; δ =0.

(3) Tamb= −65 °C; tp =80 µs; δ =0.

handbook, halfpage

−16

−12

−8

−4

−0.5

(A)

−1.5

−2.0

−1.0

(1)

(2) (3)

VSD (V)

−2.5

MGD733

Fig.11 Drain-source on-state resistance as a

function of gate-source voltage;

typical values.

Tamb =25 °C; tp =80 µs; δ =0.

VDS ≥ ID × RDSon.

handbook, halfpage

−10

RDSon

Ω)

−2

−4

−6

−8

VGS (V)

103

102

MGD734

ID =

100 mA

500 mA

1.4 A

2.8 A

5.5 A

10 A

15 A

22 A

Fig.12 Temperature coefficient of gate-source

threshold voltage as a function of junction

temperature; typical values.

VGSth at VDS =VGS; ID = −1 mA.

GSth at Tj

GSth at 25 ° C

--------------------------------------

handbook, halfpage

−75

175

1.2

0.7

0.8

0.9

1.0

1.1

−25

125

Tj (°C)

MGD735

handbook, halfpage

1.8

0.6

1.0

1.4

MGD736

−75

175

−25

(2)

125

Tj (°C)

(1)

Fig.13 Temperature coefficient of drain-source

on-resistance as a function of junction

temperature; typical values.

(1) RDSon at VGS = −10 V; ID = −2.8 A.

(2) RDSon at VGS = −4.5 V; ID = −1.4 A.

DSon at Tj

DSon at 25 ° C

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