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2SC5600 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC5600
подробное описание детали  NPN SILICON RF TWIN TRANSISTOR
PDF  18 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5600 датащи(HTML) 4 Page - Renesas Technology Corp

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Data Sheet P15570EJ1V0DS
2
µµµµPA891TC
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−−
600
nA
Emitter Cut-off Current
IEBO
VBE = 1 V, IC = 0 mA
−−
600
nA
DC Current Gain
hFE
Note 1
VCE = 1 V, IC = 5 mA
100
−
160
−
Gain Bandwidth Product (1)
fT
VCE = 1 V, IC = 5 mA, f = 2 GHz
3.5
5.0
−
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 15 mA, f = 2 GHz
5.5
6.5
−
GHz
Insertion Power Gain (1)
S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz
3.5
4.0
−
dB
Insertion Power Gain (2)
S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz
4.5
5.5
−
dB
Noise Figure
NF
VCE = 1 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
−
1.5
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
−
0.8
1.0
pF
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
Marking
4B
hFE Value
100 to 160



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