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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5435 датащи(PDF) 4 Page - Renesas Technology Corp |
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2SC5435 датащи(HTML) 4 Page - Renesas Technology Corp |
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4 / 38 page  Data Sheet P15571EJ1V0DS 2 µµµµPA841TD ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Parameter Symbol Ratings Unit Q1 Q2 Collector to Base Voltage VCBO 99 V Collector to Emitter Voltage VCEO 65.5 V Emitter to Base Voltage VEBO 21.5 V Collector Current IC 30 100 mA Total Power Dissipation Ptot Note 180 190 mW 210 in 2 elements Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy substrate ELECTRICAL CHARACTERISTICS (TA = +25 °°°°C) (1) Q1 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA −− 100 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA −− 100 nA DC Current Gain hFE Note 1 VCE = 3 V, IC = 10 mA 75 − 150 − Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 10.0 12.0 − GHz Insertion Power Gain S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz 7.0 8.5 − dB Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = Zopt − 1.5 2.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz − 0.4 0.7 pF (2) Q2 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA −− 600 nA Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA −− 600 nA DC Current Gain hFE Note 1 VCE = 1 V, IC = 5 mA 100 − 160 − Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.5 5.0 − GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.5 6.5 − GHz Insertion Power Gain (1) S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz 3.5 4.0 − dB Insertion Power Gain (2) S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5 − dB Noise Figure NF VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt − 1.5 2.5 dB Reverse Transfer Capacitance Cre Note 2 VCB = 0.5 V, IE = 0 mA, f = 1 MHz − 0.8 1.0 pF Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded |
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