2

µµµµPA831TF

ABSOLUTE MAXIMUM RATINGS (TA = 25

°°°°C)

RATING

Q1

Q2

Collector to base voltage

VCBO

20

20

V

Collector to emitter voltage

VCEO

12

10

V

Emitter to base voltage

VEBO

3

1.5

V

Collector current

IC

100

65

mA

Total power dissipation

PT

150 in 1 element

150 in 1 element

mW

200 in 2 elements

Note

Junction temperature

Tj

150

150

°C

Storage temperature

Tstg

−65 to +150

°C

Note

110 mW must not be exceeded for 1 element.

(1) Q1

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

CONDITION

MIN.

TYP.

MAX.

UNIT

Collector cutoff current

ICBO

VCB = 10 V, IE = 0

1

µA

Emitter cutoff current

IEBO

VEB = 1 V, IC = 0

1

µA

DC current gain

hFE

VCE = 3 V, IC = 7 mA

Note 1

100

145

Gain bandwidth product

fT

VCE = 3 V, IC = 7 mA, f = 1 GHz

3.0

4.5

GHz

Feedback capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHz

Note 2

0.7

1.5

pF

Insertion power gain

|S21e|2

VCE = 3 V, IC = 7 mA, f = 1 GHz

7

9

dB

Noise figure

NF

VCE = 3 V, IC = 7 mA, f = 1 GHz

1.2

2.5

dB

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

UNIT

SYMBOL

PARAMETER