Philips Semiconductors

Product specification

P-channel enhancement mode

BSH207

MOS transistor

Fig.7. Typical transfer characteristics.

I

Fig.8. Typical transconductance, T

g

Fig.9. Normalised drain-source on-state resistance.

R

Fig.10. Gate threshold voltage.

V

Fig.11. Sub-threshold drain current.

I

Fig.12. Typical capacitances, C

C = f(V

BSH207

-5

-4.5

-4

-3.5

-3

-2.5

-2

-1.5

-1

-0.5

0

-2

-1.5

-1

-0.5

0

Gate-Source Voltage, VGS (V)

VDS > ID X RDS(on)

Tj = 25 C

150 C

Drain Current, ID (A)

Threshold Voltage, VGS(to), (V)

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0

25

50

75

100

125

150

Junction Temperature, Tj (C)

minimum

typical

BSH207

0

1

2

3

4

5

6

7

8

-2.6

-2.4

-2.2

-2

-1.8

-1.6

-1.4

-1.2

-1

-0.8

-0.6

-0.4

-0.2

0

Drain Current, ID (A)

Transconductance, gfs (S)

Tj = 25 C

150 C

VDS > ID X RDS(on)

BSH207

1E-07

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

-1

-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1

0

Gate-Source Voltage, VGS (V)

Drain Current, ID (A)

VDS = -5 V

Tj = 25 C

Normalised Drain-Source On Resistance

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

0

25

50

75

100

125

150

Junction Temperature, Tj (C)

VGS = -4.5 V

-1.8 V

RDS(ON) @ Tj

RDS(ON) @ 25C

-2.5 V

BSH207

10

100

1000

-0.1

-1.0

-10.0

-100.0

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

August 1998

4

Rev 1.000