BSD22 datasheet(2/6 Pages) PHILIPS

номер детали	BSD22

подробное описание детали	MOSFET N-channel depletion switching transistor

PDF	6 Pages

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производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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2 / 6 page

December 1997

Philips Semiconductors

Product speciﬁcation

MOSFET N-channel depletion switching transistor

BSD22

DESCRIPTION

Symmetrical insulated-gate silicon

MOS field-effect transistor of the

n-channel depletion mode type.The

transistor is sealed in a SOT143

envelope and features a low

ON-resistance and low

capacitances.The transistor is

protected against excessive input

voltages by integrated back-to-back

diodes between gate and substrate.

Applications:

• analog and/or digital switch

• switch driver

• convertor

• chopper

PINNING

Note

1. Drain and source are

interchangeable

= substrate (b)

= source

= drain

= gate

Marking code: M32

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM389

Top view

QUICK REFERENCE DATA

Drain-source voltage

VDS

max.

Gate-source voltage

VGS

max.

+ 15

− 40

Drain current (DC)

max.

Total power dissipation up to Tamb =25 °CPtot

max.

230

Junction temperature

max.

125

°C

Drain-source ON-resistance

VGS = 10 V; VSB = 0; ID = 1 mA

RDSon

max.

Ω

Feed-back capacitance

VGS =VBS = −5 V; VDS = 10 V; f = 1 MHz

Crss

typ.

0.6

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