NB2879A datasheet(3/6 Pages) ONSEMI

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NB2879A

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Figure 3. Modulation Profile

Table 3. MAXIMUM RATINGS

Symbol

Description

Rating

Unit

VDD, VIN

Voltage on any pin with respect to Ground

0.5 to + 7.0

TSTG

Storage Temperature

−65 to +125

°C

Operating Temperature

0 to 70

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Table 4. DC ELECTRICAL CHARACTERISTICS (Test Conditions: All parameters are measured at room temperature 25°C)

Symbol

Description

Min

Typ

Max

Unit

VIL

Input LOW Voltage

GND − 0.3

0.8

VIH

Input HIGH Voltage

2.0

VDD + 0.3

IIL

Input LOW Current

−35

IIH

Input HIGH Current

IXOL

XOUT Output LOW Current (@ 4.0 V, VDD = 3.3 V)

IXOH

XOUT Output HIGH Current (@ 2.5 V, VDD = 3.3 V)

VOL

Output LOW Voltage (VDD = 3.3 V, IOL = 20 mA)

0.4

VOH

Output HIGH Voltage (VDD = 3.3 V, IOH = 20 mA)

2.5

IDD

Static Supply Current

ICC

Dynamic Supply Current (3.3 V, 30 MHz, and 15 pF loading)

VDD

Operating Voltage

3.0

3.3

3.6

tON

Powerup Time (first locked cycle after powerup)

0.18

ZOUT

Clock Output Impedance

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit

board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared

operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit

values are applied individually under normal operating conditions and not valid simultaneously.

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